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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Load switch and Back-Light Inverter. KMB3D5N40SA N-Ch Trench MOSFET L E B L 2 H FEATURES VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super Hige Dense Cell Design 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage ) SYMBOL VDSS VGSS N-Ch 40 20 3.5 2.8 IDP IS PD Tj Tstg RthJA 5sec 14 1.0 1.25 W 0.8 150 -55 150 100 /W A A UNIT V V DC@Ta=25 Drain Current DC@Ta=70 Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation Ta=25 Ta=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note > *Surface Mounted on 1 1 FR4 Board, t ID KN1 PIN CONNECTION (TOP VIEW) D 3 3 2 1 2 1 G S 2008. 2. 19 Revision No : 0 J D 1/5 KMB3D5N40SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note > *Pulse Test : Pulse width <300 VSDF* VGS=0V, IS=1A 0.8 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=20V, VGS=10V ID=1A, RG=6 VDS=20V, VGS=0V, ID=3.5A VDS=20V, f=1MHz, VGS=0V 315 69 39 6.4 0.7 2.1 5 12 20 15 10 10 20 ns 30 25 nC pF BVDSS IDSS VGS=0V, VDS=32V, Tj=55 IGSS Vth RDS(ON)* VGS=4.5V, ID=3.0A ID(ON)* gfs* VGS=10V, VDS 4.5V 6 56 10 62 A S VGS= 20V, VDS=0V 1.0 36 10 100 3.0 45 m nA V IDS=250 A, VGS=0V, VGS=0V, VDS=32V 40 0.5 A V SYMBOL ) TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10V, ID=3.5A VDS=10V, ID=3.5A , Duty cycle < 2% 2008. 2. 19 Revision No : 0 2/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 3/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 4/5 KMB3D5N40SA 2008. 2. 19 Revision No : 0 5/5 |
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